Installation type | Base installation |
packing | bulk |
series | - |
Part status | On sale |
working temperature | -40°C ~ 150°C(TJ) |
Encapsulation/Housing | SP4 |
Warehouse | China/Hong Kong |
quality | Original genuine |
Power - maximum | 780W |
FET Type | 2 N channels(half-bridge) |
Drain source voltage (Vdss) | 1200V(1.2kV) |
Current at 25 ° C - continuous drain (Id) | 34A |
On resistance (maximum) for different Ids and Vgs | 348 mΩ @ 17A,10V |
Vgs (th) (maximum) for different Ids | 5V @ 5mA |
Gate charge (Qg) at different Vgs (maximum) | 374nC @ 10V |
Input capacitance at different Vds (Ciss) (maximum) | 10300pF @ 25V |
FET function | standard |